диафрагмированные волноводные фильтры / 1d30b4d0-99b4-4661-9233-6ce1a89cfc55

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Figure 14. Simulation result of (a) SIW and (b) DGS SIW H-plane filter in stop band.

Figure 15. Top and bottom view of the two substrates in DGS SIW H-plane filter.

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International Journal of Electronics

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Figure 16. Comparison between simulation and measurement results.

This prototype of double-layer substrate is shown in Figure 15.

Figure 16 shows that the S parameters of the fabricated DGS SIW H-plane filter were measured with two stripline connectors by the Agilent 8720 B vector network analyzer (VNA).

A comparison between simulation and measurement results can be observed in Figure 16.

As it is observed in Figure 16, the insertion loss of the fabricated model is 2.78 dB and the return loss is 12.34 dB at the centre frequency (5.26 GHz), which are about 1.44 dB and 9.14 dB higher than the simulation results, respectively.

7. Conclusion

A novel double-layer planar millimetre-wave DGS SIW H-plane filter is presented. A prototype of this filter is designed, simulated and fabricated using a PCB process. This proposed SIW filter is totally realised by metallic vias in double-layer substrate, and shows the advantages such as compact size, low weight and low cost. It is a favourable choice for designing microwave and millimetre-wave planar circuits.

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