- •Preface
- •Imaging Microscopic Features
- •Measuring the Crystal Structure
- •References
- •Contents
- •1.4 Simulating the Effects of Elastic Scattering: Monte Carlo Calculations
- •What Are the Main Features of the Beam Electron Interaction Volume?
- •How Does the Interaction Volume Change with Composition?
- •How Does the Interaction Volume Change with Incident Beam Energy?
- •How Does the Interaction Volume Change with Specimen Tilt?
- •1.5 A Range Equation To Estimate the Size of the Interaction Volume
- •References
- •2: Backscattered Electrons
- •2.1 Origin
- •2.2.1 BSE Response to Specimen Composition (η vs. Atomic Number, Z)
- •SEM Image Contrast with BSE: “Atomic Number Contrast”
- •SEM Image Contrast: “BSE Topographic Contrast—Number Effects”
- •2.2.3 Angular Distribution of Backscattering
- •Beam Incident at an Acute Angle to the Specimen Surface (Specimen Tilt > 0°)
- •SEM Image Contrast: “BSE Topographic Contrast—Trajectory Effects”
- •2.2.4 Spatial Distribution of Backscattering
- •Depth Distribution of Backscattering
- •Radial Distribution of Backscattered Electrons
- •2.3 Summary
- •References
- •3: Secondary Electrons
- •3.1 Origin
- •3.2 Energy Distribution
- •3.3 Escape Depth of Secondary Electrons
- •3.8 Spatial Characteristics of Secondary Electrons
- •References
- •4: X-Rays
- •4.1 Overview
- •4.2 Characteristic X-Rays
- •4.2.1 Origin
- •4.2.2 Fluorescence Yield
- •4.2.3 X-Ray Families
- •4.2.4 X-Ray Nomenclature
- •4.2.6 Characteristic X-Ray Intensity
- •Isolated Atoms
- •X-Ray Production in Thin Foils
- •X-Ray Intensity Emitted from Thick, Solid Specimens
- •4.3 X-Ray Continuum (bremsstrahlung)
- •4.3.1 X-Ray Continuum Intensity
- •4.3.3 Range of X-ray Production
- •4.4 X-Ray Absorption
- •4.5 X-Ray Fluorescence
- •References
- •5.1 Electron Beam Parameters
- •5.2 Electron Optical Parameters
- •5.2.1 Beam Energy
- •Landing Energy
- •5.2.2 Beam Diameter
- •5.2.3 Beam Current
- •5.2.4 Beam Current Density
- •5.2.5 Beam Convergence Angle, α
- •5.2.6 Beam Solid Angle
- •5.2.7 Electron Optical Brightness, β
- •Brightness Equation
- •5.2.8 Focus
- •Astigmatism
- •5.3 SEM Imaging Modes
- •5.3.1 High Depth-of-Field Mode
- •5.3.2 High-Current Mode
- •5.3.3 Resolution Mode
- •5.3.4 Low-Voltage Mode
- •5.4 Electron Detectors
- •5.4.1 Important Properties of BSE and SE for Detector Design and Operation
- •Abundance
- •Angular Distribution
- •Kinetic Energy Response
- •5.4.2 Detector Characteristics
- •Angular Measures for Electron Detectors
- •Elevation (Take-Off) Angle, ψ, and Azimuthal Angle, ζ
- •Solid Angle, Ω
- •Energy Response
- •Bandwidth
- •5.4.3 Common Types of Electron Detectors
- •Backscattered Electrons
- •Passive Detectors
- •Scintillation Detectors
- •Semiconductor BSE Detectors
- •5.4.4 Secondary Electron Detectors
- •Everhart–Thornley Detector
- •Through-the-Lens (TTL) Electron Detectors
- •TTL SE Detector
- •TTL BSE Detector
- •Measuring the DQE: BSE Semiconductor Detector
- •References
- •6: Image Formation
- •6.1 Image Construction by Scanning Action
- •6.2 Magnification
- •6.3 Making Dimensional Measurements With the SEM: How Big Is That Feature?
- •Using a Calibrated Structure in ImageJ-Fiji
- •6.4 Image Defects
- •6.4.1 Projection Distortion (Foreshortening)
- •6.4.2 Image Defocusing (Blurring)
- •6.5 Making Measurements on Surfaces With Arbitrary Topography: Stereomicroscopy
- •6.5.1 Qualitative Stereomicroscopy
- •Fixed beam, Specimen Position Altered
- •Fixed Specimen, Beam Incidence Angle Changed
- •6.5.2 Quantitative Stereomicroscopy
- •Measuring a Simple Vertical Displacement
- •References
- •7: SEM Image Interpretation
- •7.1 Information in SEM Images
- •7.2.2 Calculating Atomic Number Contrast
- •Establishing a Robust Light-Optical Analogy
- •Getting It Wrong: Breaking the Light-Optical Analogy of the Everhart–Thornley (Positive Bias) Detector
- •Deconstructing the SEM/E–T Image of Topography
- •SUM Mode (A + B)
- •DIFFERENCE Mode (A−B)
- •References
- •References
- •9: Image Defects
- •9.1 Charging
- •9.1.1 What Is Specimen Charging?
- •9.1.3 Techniques to Control Charging Artifacts (High Vacuum Instruments)
- •Observing Uncoated Specimens
- •Coating an Insulating Specimen for Charge Dissipation
- •Choosing the Coating for Imaging Morphology
- •9.2 Radiation Damage
- •9.3 Contamination
- •References
- •10: High Resolution Imaging
- •10.2 Instrumentation Considerations
- •10.4.1 SE Range Effects Produce Bright Edges (Isolated Edges)
- •10.4.4 Too Much of a Good Thing: The Bright Edge Effect Hinders Locating the True Position of an Edge for Critical Dimension Metrology
- •10.5.1 Beam Energy Strategies
- •Low Beam Energy Strategy
- •High Beam Energy Strategy
- •Making More SE1: Apply a Thin High-δ Metal Coating
- •Making Fewer BSEs, SE2, and SE3 by Eliminating Bulk Scattering From the Substrate
- •10.6 Factors That Hinder Achieving High Resolution
- •10.6.2 Pathological Specimen Behavior
- •Contamination
- •Instabilities
- •References
- •11: Low Beam Energy SEM
- •11.3 Selecting the Beam Energy to Control the Spatial Sampling of Imaging Signals
- •11.3.1 Low Beam Energy for High Lateral Resolution SEM
- •11.3.2 Low Beam Energy for High Depth Resolution SEM
- •11.3.3 Extremely Low Beam Energy Imaging
- •References
- •12.1.1 Stable Electron Source Operation
- •12.1.2 Maintaining Beam Integrity
- •12.1.4 Minimizing Contamination
- •12.3.1 Control of Specimen Charging
- •12.5 VPSEM Image Resolution
- •References
- •13: ImageJ and Fiji
- •13.1 The ImageJ Universe
- •13.2 Fiji
- •13.3 Plugins
- •13.4 Where to Learn More
- •References
- •14: SEM Imaging Checklist
- •14.1.1 Conducting or Semiconducting Specimens
- •14.1.2 Insulating Specimens
- •14.2 Electron Signals Available
- •14.2.1 Beam Electron Range
- •14.2.2 Backscattered Electrons
- •14.2.3 Secondary Electrons
- •14.3 Selecting the Electron Detector
- •14.3.2 Backscattered Electron Detectors
- •14.3.3 “Through-the-Lens” Detectors
- •14.4 Selecting the Beam Energy for SEM Imaging
- •14.4.4 High Resolution SEM Imaging
- •Strategy 1
- •Strategy 2
- •14.5 Selecting the Beam Current
- •14.5.1 High Resolution Imaging
- •14.5.2 Low Contrast Features Require High Beam Current and/or Long Frame Time to Establish Visibility
- •14.6 Image Presentation
- •14.6.1 “Live” Display Adjustments
- •14.6.2 Post-Collection Processing
- •14.7 Image Interpretation
- •14.7.1 Observer’s Point of View
- •14.7.3 Contrast Encoding
- •14.8.1 VPSEM Advantages
- •14.8.2 VPSEM Disadvantages
- •15: SEM Case Studies
- •15.1 Case Study: How High Is That Feature Relative to Another?
- •15.2 Revealing Shallow Surface Relief
- •16.1.2 Minor Artifacts: The Si-Escape Peak
- •16.1.3 Minor Artifacts: Coincidence Peaks
- •16.1.4 Minor Artifacts: Si Absorption Edge and Si Internal Fluorescence Peak
- •16.2 “Best Practices” for Electron-Excited EDS Operation
- •16.2.1 Operation of the EDS System
- •Choosing the EDS Time Constant (Resolution and Throughput)
- •Choosing the Solid Angle of the EDS
- •Selecting a Beam Current for an Acceptable Level of System Dead-Time
- •16.3.1 Detector Geometry
- •16.3.2 Process Time
- •16.3.3 Optimal Working Distance
- •16.3.4 Detector Orientation
- •16.3.5 Count Rate Linearity
- •16.3.6 Energy Calibration Linearity
- •16.3.7 Other Items
- •16.3.8 Setting Up a Quality Control Program
- •Using the QC Tools Within DTSA-II
- •Creating a QC Project
- •Linearity of Output Count Rate with Live-Time Dose
- •Resolution and Peak Position Stability with Count Rate
- •Solid Angle for Low X-ray Flux
- •Maximizing Throughput at Moderate Resolution
- •References
- •17: DTSA-II EDS Software
- •17.1 Getting Started With NIST DTSA-II
- •17.1.1 Motivation
- •17.1.2 Platform
- •17.1.3 Overview
- •17.1.4 Design
- •Simulation
- •Quantification
- •Experiment Design
- •Modeled Detectors (. Fig. 17.1)
- •Window Type (. Fig. 17.2)
- •The Optimal Working Distance (. Figs. 17.3 and 17.4)
- •Elevation Angle
- •Sample-to-Detector Distance
- •Detector Area
- •Crystal Thickness
- •Number of Channels, Energy Scale, and Zero Offset
- •Resolution at Mn Kα (Approximate)
- •Azimuthal Angle
- •Gold Layer, Aluminum Layer, Nickel Layer
- •Dead Layer
- •Zero Strobe Discriminator (. Figs. 17.7 and 17.8)
- •Material Editor Dialog (. Figs. 17.9, 17.10, 17.11, 17.12, 17.13, and 17.14)
- •17.2.1 Introduction
- •17.2.2 Monte Carlo Simulation
- •17.2.4 Optional Tables
- •References
- •18: Qualitative Elemental Analysis by Energy Dispersive X-Ray Spectrometry
- •18.1 Quality Assurance Issues for Qualitative Analysis: EDS Calibration
- •18.2 Principles of Qualitative EDS Analysis
- •Exciting Characteristic X-Rays
- •Fluorescence Yield
- •X-ray Absorption
- •Si Escape Peak
- •Coincidence Peaks
- •18.3 Performing Manual Qualitative Analysis
- •Beam Energy
- •Choosing the EDS Resolution (Detector Time Constant)
- •Obtaining Adequate Counts
- •18.4.1 Employ the Available Software Tools
- •18.4.3 Lower Photon Energy Region
- •18.4.5 Checking Your Work
- •18.5 A Worked Example of Manual Peak Identification
- •References
- •19.1 What Is a k-ratio?
- •19.3 Sets of k-ratios
- •19.5 The Analytical Total
- •19.6 Normalization
- •19.7.1 Oxygen by Assumed Stoichiometry
- •19.7.3 Element by Difference
- •19.8 Ways of Reporting Composition
- •19.8.1 Mass Fraction
- •19.8.2 Atomic Fraction
- •19.8.3 Stoichiometry
- •19.8.4 Oxide Fractions
- •Example Calculations
- •19.9 The Accuracy of Quantitative Electron-Excited X-ray Microanalysis
- •19.9.1 Standards-Based k-ratio Protocol
- •19.9.2 “Standardless Analysis”
- •19.10 Appendix
- •19.10.1 The Need for Matrix Corrections To Achieve Quantitative Analysis
- •19.10.2 The Physical Origin of Matrix Effects
- •19.10.3 ZAF Factors in Microanalysis
- •X-ray Generation With Depth, φ(ρz)
- •X-ray Absorption Effect, A
- •X-ray Fluorescence, F
- •References
- •20.2 Instrumentation Requirements
- •20.2.1 Choosing the EDS Parameters
- •EDS Spectrum Channel Energy Width and Spectrum Energy Span
- •EDS Time Constant (Resolution and Throughput)
- •EDS Calibration
- •EDS Solid Angle
- •20.2.2 Choosing the Beam Energy, E0
- •20.2.3 Measuring the Beam Current
- •20.2.4 Choosing the Beam Current
- •Optimizing Analysis Strategy
- •20.3.4 Ba-Ti Interference in BaTiSi3O9
- •20.4 The Need for an Iterative Qualitative and Quantitative Analysis Strategy
- •20.4.2 Analysis of a Stainless Steel
- •20.5 Is the Specimen Homogeneous?
- •20.6 Beam-Sensitive Specimens
- •20.6.1 Alkali Element Migration
- •20.6.2 Materials Subject to Mass Loss During Electron Bombardment—the Marshall-Hall Method
- •Thin Section Analysis
- •Bulk Biological and Organic Specimens
- •References
- •21: Trace Analysis by SEM/EDS
- •21.1 Limits of Detection for SEM/EDS Microanalysis
- •21.2.1 Estimating CDL from a Trace or Minor Constituent from Measuring a Known Standard
- •21.2.2 Estimating CDL After Determination of a Minor or Trace Constituent with Severe Peak Interference from a Major Constituent
- •21.3 Measurements of Trace Constituents by Electron-Excited Energy Dispersive X-ray Spectrometry
- •The Inevitable Physics of Remote Excitation Within the Specimen: Secondary Fluorescence Beyond the Electron Interaction Volume
- •Simulation of Long-Range Secondary X-ray Fluorescence
- •NIST DTSA II Simulation: Vertical Interface Between Two Regions of Different Composition in a Flat Bulk Target
- •NIST DTSA II Simulation: Cubic Particle Embedded in a Bulk Matrix
- •21.5 Summary
- •References
- •22.1.2 Low Beam Energy Analysis Range
- •22.2 Advantage of Low Beam Energy X-Ray Microanalysis
- •22.2.1 Improved Spatial Resolution
- •22.3 Challenges and Limitations of Low Beam Energy X-Ray Microanalysis
- •22.3.1 Reduced Access to Elements
- •22.3.3 At Low Beam Energy, Almost Everything Is Found To Be Layered
- •Analysis of Surface Contamination
- •References
- •23: Analysis of Specimens with Special Geometry: Irregular Bulk Objects and Particles
- •23.2.1 No Chemical Etching
- •23.3 Consequences of Attempting Analysis of Bulk Materials With Rough Surfaces
- •23.4.1 The Raw Analytical Total
- •23.4.2 The Shape of the EDS Spectrum
- •23.5 Best Practices for Analysis of Rough Bulk Samples
- •23.6 Particle Analysis
- •Particle Sample Preparation: Bulk Substrate
- •The Importance of Beam Placement
- •Overscanning
- •“Particle Mass Effect”
- •“Particle Absorption Effect”
- •The Analytical Total Reveals the Impact of Particle Effects
- •Does Overscanning Help?
- •23.6.6 Peak-to-Background (P/B) Method
- •Specimen Geometry Severely Affects the k-ratio, but Not the P/B
- •Using the P/B Correspondence
- •23.7 Summary
- •References
- •24: Compositional Mapping
- •24.2 X-Ray Spectrum Imaging
- •24.2.1 Utilizing XSI Datacubes
- •24.2.2 Derived Spectra
- •SUM Spectrum
- •MAXIMUM PIXEL Spectrum
- •24.3 Quantitative Compositional Mapping
- •24.4 Strategy for XSI Elemental Mapping Data Collection
- •24.4.1 Choosing the EDS Dead-Time
- •24.4.2 Choosing the Pixel Density
- •24.4.3 Choosing the Pixel Dwell Time
- •“Flash Mapping”
- •High Count Mapping
- •References
- •25.1 Gas Scattering Effects in the VPSEM
- •25.1.1 Why Doesn’t the EDS Collimator Exclude the Remote Skirt X-Rays?
- •25.2 What Can Be Done To Minimize gas Scattering in VPSEM?
- •25.2.2 Favorable Sample Characteristics
- •Particle Analysis
- •25.2.3 Unfavorable Sample Characteristics
- •References
- •26.1 Instrumentation
- •26.1.2 EDS Detector
- •26.1.3 Probe Current Measurement Device
- •Direct Measurement: Using a Faraday Cup and Picoammeter
- •A Faraday Cup
- •Electrically Isolated Stage
- •Indirect Measurement: Using a Calibration Spectrum
- •26.1.4 Conductive Coating
- •26.2 Sample Preparation
- •26.2.1 Standard Materials
- •26.2.2 Peak Reference Materials
- •26.3 Initial Set-Up
- •26.3.1 Calibrating the EDS Detector
- •Selecting a Pulse Process Time Constant
- •Energy Calibration
- •Quality Control
- •Sample Orientation
- •Detector Position
- •Probe Current
- •26.4 Collecting Data
- •26.4.1 Exploratory Spectrum
- •26.4.2 Experiment Optimization
- •26.4.3 Selecting Standards
- •26.4.4 Reference Spectra
- •26.4.5 Collecting Standards
- •26.4.6 Collecting Peak-Fitting References
- •26.5 Data Analysis
- •26.5.2 Quantification
- •26.6 Quality Check
- •Reference
- •27.2 Case Study: Aluminum Wire Failures in Residential Wiring
- •References
- •28: Cathodoluminescence
- •28.1 Origin
- •28.2 Measuring Cathodoluminescence
- •28.3 Applications of CL
- •28.3.1 Geology
- •Carbonado Diamond
- •Ancient Impact Zircons
- •28.3.2 Materials Science
- •Semiconductors
- •Lead-Acid Battery Plate Reactions
- •28.3.3 Organic Compounds
- •References
- •29.1.1 Single Crystals
- •29.1.2 Polycrystalline Materials
- •29.1.3 Conditions for Detecting Electron Channeling Contrast
- •Specimen Preparation
- •Instrument Conditions
- •29.2.1 Origin of EBSD Patterns
- •29.2.2 Cameras for EBSD Pattern Detection
- •29.2.3 EBSD Spatial Resolution
- •29.2.5 Steps in Typical EBSD Measurements
- •Sample Preparation for EBSD
- •Align Sample in the SEM
- •Check for EBSD Patterns
- •Adjust SEM and Select EBSD Map Parameters
- •Run the Automated Map
- •29.2.6 Display of the Acquired Data
- •29.2.7 Other Map Components
- •29.2.10 Application Example
- •Application of EBSD To Understand Meteorite Formation
- •29.2.11 Summary
- •Specimen Considerations
- •EBSD Detector
- •Selection of Candidate Crystallographic Phases
- •Microscope Operating Conditions and Pattern Optimization
- •Selection of EBSD Acquisition Parameters
- •Collect the Orientation Map
- •References
- •30.1 Introduction
- •30.2 Ion–Solid Interactions
- •30.3 Focused Ion Beam Systems
- •30.5 Preparation of Samples for SEM
- •30.5.1 Cross-Section Preparation
- •30.5.2 FIB Sample Preparation for 3D Techniques and Imaging
- •30.6 Summary
- •References
- •31: Ion Beam Microscopy
- •31.1 What Is So Useful About Ions?
- •31.2 Generating Ion Beams
- •31.3 Signal Generation in the HIM
- •31.5 Patterning with Ion Beams
- •31.7 Chemical Microanalysis with Ion Beams
- •References
- •Appendix
- •A Database of Electron–Solid Interactions
- •A Database of Electron–Solid Interactions
- •Introduction
- •Backscattered Electrons
- •Secondary Yields
- •Stopping Powers
- •X-ray Ionization Cross Sections
- •Conclusions
- •References
- •Index
- •Reference List
- •Index
80\ Chapter 5 · Scanning Electron Microscope (SEM) Instrumentation
5
a
b
. Fig. 5.17 Examples of graphical user interface controls that allow the operator to control the beam current in discrete steps expressed as changes in Spot Size. In a, the can choose any of several Spot Size values from a pull-down menu. In b, from the same microscope, the operator can access Spot Size via a pull-down menu or buttons that increase or decrease the value
to assume this setting will reliably produce the displayed value. Well-equipped SEMs have a built-in picoammeter that can be automatically inserted into the beam path to measure probe current. Getting a reading in these cases is as simple as triggering the insertion of the meter’s cup and reading the value off the screen. Alternatively, a stage-mounted Faraday cup (either purchased commercially or homemade) attached through an electrical feedthrough to a benchtop picoammeter can be used instead.
Since the basic idea of High-Current Mode is to deliver sufficient probe current to the sample to generate superior signal-to-noise ratio, optimum results are obtained at medium to low magnifications, and often a larger final aperture is useful. Frame the field-of-view desired, focus the beam, and increase probe current until high-quality images can be obtained within a relatively short frame time, say, a few seconds to a minute. Check that any low-contrast features needed for analysis are sufficiently visible, and increase probe current further if they are not. For many situations, this high-current imaging approach will yield excellent images quickly and with little wasted time. If you are performing X-ray microanalysis, the approach to High-Current Mode is very similar to that for imaging, but the choice of current is dictated not by image quality but by X-ray count rate or, more suitably, the dead time percentage of the X-ray spectrometer’s pulse processor.
5.3.3\ Resolution Mode
Resolution Mode is probably the most demanding of the four basic SEM operational modes, chiefly because the microscope is driven at or near its limits of performance. It challenges the operator mentally, since choosing optimum imaging parameters requires deeper knowledge of electron optics and the physics of electron beams, although suitable images can be obtained with a basic understanding of the principles. It also demands more skill in operating the microscope, since small misalignments (e.g., residual stigmatism, imperfectly centered aperture) are more apparent. In fact, good alignment of the entire column is necessary to get the best resolution from the scope, while small misalignments are often tolerated in High-Current or High Depth-of-Field Mode. Resolution Mode also expects more from the microscope’s environment. Mechanical vibrations, electronic noise, and AC magnetic fields near the microscope are some of the many sources of image degradation that, while generally unnoticeable, become obvious when operating in Resolution Mode. Poor sample preparation, such as overly thick evaporated metal coatings or insufficient metallographic polishing, for example, is also more evident at high magnifications. Most of these challenges are greatly reduced at lower magnifications, but the larger pixel sizes that result from low magnification obviate the need for Resolution Mode. In short, the same imaging conditions that enable Resolution Mode also highlight any shortcomings in the operator’s technique, the laboratory environment, and the sample preparation.
5.3 · SEM Imaging Modes
Although every one of the basic SEM operational modes requires some compromise, in Resolution Mode the pursuit of high spatial resolution often involves compromise across the board. Small probe diameters require very low beam currents, thereby reducing the signal generated and lengthening the frame times needed. Depth-of-field is also reduced, although this is often not noticeable at high magnification, and detector choice is usually limited to the one or two channels optimized for this purpose (e.g., through-the-lens detectors).
The basic idea in Resolution Mode is to (1) minimize the probe diameter by raising the beam energy and reducing the beam current, (2) emphasize the collection of the resolution- preserving SE1 secondary electrons generated at the beam footprint, and (3) minimize the myriad sources of image degradation by using the shortest working distance possible. Raising the beam energy helps produce smaller probe sizes because it increases the brightness of the gun. For thin samples, such as small particles sitting on an ultrathin film substrate, this produces the highest resolution. Likewise for very high-Z samples, even high landing energies have short electron ranges and therefore small excitation volumes. However, for thick samples with low atomic number, better resolution may be obtained at lower landing energies if the size of the excitation volume is the limiting factor. For any given beam energy, smaller currents always yield smaller probe sizes, as demanded by the brightness equation, so operating at tens of picoamps is not uncommon in this mode. Choice of signal carrier and detector can be crucial for obtaining high spatial resolution. Since backscattered electrons emerge from a disc comparable in size to the electron range, it is very hard to realize high resolution by using backscattered electrons (BSE) directly or BSE-generated secondaries such as SE2 secondary electrons (generated at the sample surface by emerging BSE) or SE3 secondary electrons (generated at great distance from the sample by BSE that strike microscope components). The highest resolution is obtained from SE1 secondary electrons, because these emerge from the very narrow electron probe footprint on the sample surface, comparable in diameter to the probe itself. Microscopes equipped with immersion objective lenses or snorkel lenses and through- the-lens detectors (TTLs) are best at efficient collection of SE1 electrons. Finally, bringing the sample very close to the objective lens, even less than 1 mm if practical, can improve resolution significantly. SE1 collection is maximized by this proximity, and a short working distance (WD) can minimize the length over which beam perturbations such as AC fields can act.
The practical steps needed to configure the SEM for operation in Resolution Mode follow from the basic requirements outlined above. Get the sample as close to the objective lens as possible by carefully shortening the working distance.
Computer-controlled SEMs will frequently have a software interlock designed to reduce the chances that the sample will physically impact the pole piece. Learn how this feature functions and use it effectively but carefully; high resolution is useful, but a scratched or dented pole piece can be a very expensive mistake! Also, beware that many microscopes possess more than one objective lens mode. Invariably the lens mode needed for best resolution will be the one that creates the
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highest magnetic field at the sample. Coupled with the proximity of a short working distance, these high magnetic field modes may lift your sample off the stage unless it consists of a non-magnetic material. Select the TTL detector if available, or other detector that preferentially utilizes SE1 secondary electrons for imaging. Increase the accelerating voltage on the SEM to its highest setting, usually 30 kV or higher, and reduce the beam current to as low a value as practical while still maintaining visibility of the sample as noise increases. Moving to a slower frame time, longer dwell time, or enabling frame averaging will help mitigate the effects of reduced signal at low probe currents. Finally, select the optimal objective lens aperture diameter for best resolution. This can be tricky because of competing effects. Small apertures can limit the resolution due to diffraction effects, so the larger the aperture the less likely that these effects will be a problem. However, large apertures quickly amplify the effects of objective lens aberrations, especially spherical aberration, so the smallest aperture size available is ideal for reduction of aberrations. Clearly these requirements conflict with one another, and every objective lens has an intermediate aperture diameter that delivers the best resolution for any given beam energy and working distance. Some SEMs inform the operator of this optimal aperture size, while others are less helpful and leave it up to the operator to determine the best choice. In these cases, contact the SEM manufacturer’s application engineer for advice or test a variety of aperture diameters on high quality imaging test specimens to understand how to manage this tradeoff.
5.3.4\ Low-Voltage Mode
Of the four basic SEM modes, Low-Voltage Mode is probably the most esoteric and challenging, regarding both instrumentation and specimen issues. Reducing the landing energy of the beam is useful in many situations, and varying the beam energy should be considered when operating in High- Current Mode or Depth-of-Field Mode as needed. However, operating with landing energies below 5 keV, and especially below 1 keV, is qualitatively different than using higher energies. The performance of the SEM’s entire electron optical chain, from the electron gun to the objective lens, is much worse at 1 keV than at high beam energy. While modern thermionic SEMs are often quite good performers in Low- Voltage Mode, not many years ago a field emission electron source (FEG) was considered a de facto requirement for low voltage work, and most older thermionic SEMs produce such poor images at 1 keV that they are almost useless.
For all electron sources the gun’s brightness will be much lower at 1 keV than at 30 keV, which limits the current density in the probe because of the brightness equation. This in turn means the operator must work at much larger probe sizes to obtain sufficient current for imaging. Here field emission sources have a big advantage over tungsten or LaB6 thermionic filaments because they are much brighter intrinsically, and so remain bright enough at low voltage for decent imaging. Another important concern that arises at these low beam
\82 Chapter 5 · Scanning Electron Microscope (SEM) Instrumentation
energies is the chromatic aberration of the objective lens. This aberration causes beam electrons at different energies to be focused in different planes, reducing the current density. Although this aberration is a flaw in the lens itself and not the electrons in the beam, lower beam energies make the problem more apparent, in part because they have a larger fractional energy spread. In fact, the effects of this aberration would not be noticeable at all in a monochromatic electron beam, where all the electrons have exactly the same energy. Similarly, electron sources with naturally narrow energy spreads, such as
5 cold field emission sources, suffer from these problems much less than sources with large energy spreads like thermionic guns. Whatever their cause, these reductions in image quality, both lower resolution and lower current density, explain why Low-Voltage Mode is commonly employed at low magnifications. Operators with expensive, high-performing field emission microscopes designed for low voltage operation will be able to work at low voltage and high magnification—even more so if the microscope is equipped with a beam monochromator, an accessory designed to artificially narrow the energy spread of the electron beam, thus reducing the effect of chromatic aberration even at very high magnifications.
Another unwanted consequence of using very low beam energies is that the resulting electron trajectories are less “stiff,” meaning the electrons are more easily deflected from their intended paths by stray electric or magnetic fields near the beam. At 1 keV landing energy and below, the electrons are moving relatively slowly and are more susceptible to electrical charging in the sample, AC electric or magnetic fields in the microscope room, and electrical noise on the microscope’s scan coils. These are some of the many challenges of imaging in Low-Voltage Mode.
The main advantages of Low-Voltage Mode are the much- reduced excitation volume and the resulting change in contrast for most sample materials. The range of primary beam electrons in most materials drops very rapidly as the landing energy is reduced, so the region in the sample emitting signal- carrying electrons can be very small, improving resolution in cases where it is limited by this range. The resulting surface sensitivity of the signal also tends to flatten the image contrast and it de-emphasizes materials contrast in favor of topography. Because the view of the sample in Low-Voltage Mode is often dramatically different than the equivalent image at normal beam energy, this mode often reveals important features in the sample that might be missed using routine imaging conditions.
It is possible to perform X-ray microanalysis at low voltage, but it presents special challenges and should not be attempted unless it is unavoidable. The very short electron range means the X-rays produced in the sample are generated close to the surface and very near the beam impact point. This is a good thing, because both lateral and depth resolution are improved, and absorption losses are reduced for outgoing X-rays. However, the low landing energies severely limit the number of X-ray lines that are efficiently excited, and many elements are either inaccessible, or the analyst is forced to use M- or N-shell lines with poorly measured cross sections or absorption coefficients. Complicating
a
b
. Fig. 5.18 Graphical user interface controls that allow the operator to control the beam energy. The instrument control software shown in a utilizes a pull-down menu on the upper left of the window to allow the operator to select the accelerating voltage in kilovolts (and thus the beam energy in kilo-electronvolts). The control is currently set to 10 kV. The interface in the screenshot in b shows a drop-down menu, allowing the SEM operator to select one of several discrete accelerating voltages between 500 V and 30 keV. In most cases, including the two shown above, the microscope allows the user to select values between the discrete settings shown in the screenshots, via a different mechanism (not shown)
matters further, the reduced brightness at low voltage means probe currents are low and X-ray count rates can be anemic.
The basic idea behind low voltage mode is simple: reduce the landing energy of the beam. The practical advice for configuring this mode is equally straightforward, since changing the beam energy on most microscopes is controlled by a dedicated knob or can be achieved by selecting the desired energy on a graphical user interface. . Figure 5.18 shows two examples of GUI controls from different instruments. In screenshots the controls are expressed in accelerating voltage measured in kV; this is equivalent to controlling the beam energy in keV.