- •Preface
- •Imaging Microscopic Features
- •Measuring the Crystal Structure
- •References
- •Contents
- •1.4 Simulating the Effects of Elastic Scattering: Monte Carlo Calculations
- •What Are the Main Features of the Beam Electron Interaction Volume?
- •How Does the Interaction Volume Change with Composition?
- •How Does the Interaction Volume Change with Incident Beam Energy?
- •How Does the Interaction Volume Change with Specimen Tilt?
- •1.5 A Range Equation To Estimate the Size of the Interaction Volume
- •References
- •2: Backscattered Electrons
- •2.1 Origin
- •2.2.1 BSE Response to Specimen Composition (η vs. Atomic Number, Z)
- •SEM Image Contrast with BSE: “Atomic Number Contrast”
- •SEM Image Contrast: “BSE Topographic Contrast—Number Effects”
- •2.2.3 Angular Distribution of Backscattering
- •Beam Incident at an Acute Angle to the Specimen Surface (Specimen Tilt > 0°)
- •SEM Image Contrast: “BSE Topographic Contrast—Trajectory Effects”
- •2.2.4 Spatial Distribution of Backscattering
- •Depth Distribution of Backscattering
- •Radial Distribution of Backscattered Electrons
- •2.3 Summary
- •References
- •3: Secondary Electrons
- •3.1 Origin
- •3.2 Energy Distribution
- •3.3 Escape Depth of Secondary Electrons
- •3.8 Spatial Characteristics of Secondary Electrons
- •References
- •4: X-Rays
- •4.1 Overview
- •4.2 Characteristic X-Rays
- •4.2.1 Origin
- •4.2.2 Fluorescence Yield
- •4.2.3 X-Ray Families
- •4.2.4 X-Ray Nomenclature
- •4.2.6 Characteristic X-Ray Intensity
- •Isolated Atoms
- •X-Ray Production in Thin Foils
- •X-Ray Intensity Emitted from Thick, Solid Specimens
- •4.3 X-Ray Continuum (bremsstrahlung)
- •4.3.1 X-Ray Continuum Intensity
- •4.3.3 Range of X-ray Production
- •4.4 X-Ray Absorption
- •4.5 X-Ray Fluorescence
- •References
- •5.1 Electron Beam Parameters
- •5.2 Electron Optical Parameters
- •5.2.1 Beam Energy
- •Landing Energy
- •5.2.2 Beam Diameter
- •5.2.3 Beam Current
- •5.2.4 Beam Current Density
- •5.2.5 Beam Convergence Angle, α
- •5.2.6 Beam Solid Angle
- •5.2.7 Electron Optical Brightness, β
- •Brightness Equation
- •5.2.8 Focus
- •Astigmatism
- •5.3 SEM Imaging Modes
- •5.3.1 High Depth-of-Field Mode
- •5.3.2 High-Current Mode
- •5.3.3 Resolution Mode
- •5.3.4 Low-Voltage Mode
- •5.4 Electron Detectors
- •5.4.1 Important Properties of BSE and SE for Detector Design and Operation
- •Abundance
- •Angular Distribution
- •Kinetic Energy Response
- •5.4.2 Detector Characteristics
- •Angular Measures for Electron Detectors
- •Elevation (Take-Off) Angle, ψ, and Azimuthal Angle, ζ
- •Solid Angle, Ω
- •Energy Response
- •Bandwidth
- •5.4.3 Common Types of Electron Detectors
- •Backscattered Electrons
- •Passive Detectors
- •Scintillation Detectors
- •Semiconductor BSE Detectors
- •5.4.4 Secondary Electron Detectors
- •Everhart–Thornley Detector
- •Through-the-Lens (TTL) Electron Detectors
- •TTL SE Detector
- •TTL BSE Detector
- •Measuring the DQE: BSE Semiconductor Detector
- •References
- •6: Image Formation
- •6.1 Image Construction by Scanning Action
- •6.2 Magnification
- •6.3 Making Dimensional Measurements With the SEM: How Big Is That Feature?
- •Using a Calibrated Structure in ImageJ-Fiji
- •6.4 Image Defects
- •6.4.1 Projection Distortion (Foreshortening)
- •6.4.2 Image Defocusing (Blurring)
- •6.5 Making Measurements on Surfaces With Arbitrary Topography: Stereomicroscopy
- •6.5.1 Qualitative Stereomicroscopy
- •Fixed beam, Specimen Position Altered
- •Fixed Specimen, Beam Incidence Angle Changed
- •6.5.2 Quantitative Stereomicroscopy
- •Measuring a Simple Vertical Displacement
- •References
- •7: SEM Image Interpretation
- •7.1 Information in SEM Images
- •7.2.2 Calculating Atomic Number Contrast
- •Establishing a Robust Light-Optical Analogy
- •Getting It Wrong: Breaking the Light-Optical Analogy of the Everhart–Thornley (Positive Bias) Detector
- •Deconstructing the SEM/E–T Image of Topography
- •SUM Mode (A + B)
- •DIFFERENCE Mode (A−B)
- •References
- •References
- •9: Image Defects
- •9.1 Charging
- •9.1.1 What Is Specimen Charging?
- •9.1.3 Techniques to Control Charging Artifacts (High Vacuum Instruments)
- •Observing Uncoated Specimens
- •Coating an Insulating Specimen for Charge Dissipation
- •Choosing the Coating for Imaging Morphology
- •9.2 Radiation Damage
- •9.3 Contamination
- •References
- •10: High Resolution Imaging
- •10.2 Instrumentation Considerations
- •10.4.1 SE Range Effects Produce Bright Edges (Isolated Edges)
- •10.4.4 Too Much of a Good Thing: The Bright Edge Effect Hinders Locating the True Position of an Edge for Critical Dimension Metrology
- •10.5.1 Beam Energy Strategies
- •Low Beam Energy Strategy
- •High Beam Energy Strategy
- •Making More SE1: Apply a Thin High-δ Metal Coating
- •Making Fewer BSEs, SE2, and SE3 by Eliminating Bulk Scattering From the Substrate
- •10.6 Factors That Hinder Achieving High Resolution
- •10.6.2 Pathological Specimen Behavior
- •Contamination
- •Instabilities
- •References
- •11: Low Beam Energy SEM
- •11.3 Selecting the Beam Energy to Control the Spatial Sampling of Imaging Signals
- •11.3.1 Low Beam Energy for High Lateral Resolution SEM
- •11.3.2 Low Beam Energy for High Depth Resolution SEM
- •11.3.3 Extremely Low Beam Energy Imaging
- •References
- •12.1.1 Stable Electron Source Operation
- •12.1.2 Maintaining Beam Integrity
- •12.1.4 Minimizing Contamination
- •12.3.1 Control of Specimen Charging
- •12.5 VPSEM Image Resolution
- •References
- •13: ImageJ and Fiji
- •13.1 The ImageJ Universe
- •13.2 Fiji
- •13.3 Plugins
- •13.4 Where to Learn More
- •References
- •14: SEM Imaging Checklist
- •14.1.1 Conducting or Semiconducting Specimens
- •14.1.2 Insulating Specimens
- •14.2 Electron Signals Available
- •14.2.1 Beam Electron Range
- •14.2.2 Backscattered Electrons
- •14.2.3 Secondary Electrons
- •14.3 Selecting the Electron Detector
- •14.3.2 Backscattered Electron Detectors
- •14.3.3 “Through-the-Lens” Detectors
- •14.4 Selecting the Beam Energy for SEM Imaging
- •14.4.4 High Resolution SEM Imaging
- •Strategy 1
- •Strategy 2
- •14.5 Selecting the Beam Current
- •14.5.1 High Resolution Imaging
- •14.5.2 Low Contrast Features Require High Beam Current and/or Long Frame Time to Establish Visibility
- •14.6 Image Presentation
- •14.6.1 “Live” Display Adjustments
- •14.6.2 Post-Collection Processing
- •14.7 Image Interpretation
- •14.7.1 Observer’s Point of View
- •14.7.3 Contrast Encoding
- •14.8.1 VPSEM Advantages
- •14.8.2 VPSEM Disadvantages
- •15: SEM Case Studies
- •15.1 Case Study: How High Is That Feature Relative to Another?
- •15.2 Revealing Shallow Surface Relief
- •16.1.2 Minor Artifacts: The Si-Escape Peak
- •16.1.3 Minor Artifacts: Coincidence Peaks
- •16.1.4 Minor Artifacts: Si Absorption Edge and Si Internal Fluorescence Peak
- •16.2 “Best Practices” for Electron-Excited EDS Operation
- •16.2.1 Operation of the EDS System
- •Choosing the EDS Time Constant (Resolution and Throughput)
- •Choosing the Solid Angle of the EDS
- •Selecting a Beam Current for an Acceptable Level of System Dead-Time
- •16.3.1 Detector Geometry
- •16.3.2 Process Time
- •16.3.3 Optimal Working Distance
- •16.3.4 Detector Orientation
- •16.3.5 Count Rate Linearity
- •16.3.6 Energy Calibration Linearity
- •16.3.7 Other Items
- •16.3.8 Setting Up a Quality Control Program
- •Using the QC Tools Within DTSA-II
- •Creating a QC Project
- •Linearity of Output Count Rate with Live-Time Dose
- •Resolution and Peak Position Stability with Count Rate
- •Solid Angle for Low X-ray Flux
- •Maximizing Throughput at Moderate Resolution
- •References
- •17: DTSA-II EDS Software
- •17.1 Getting Started With NIST DTSA-II
- •17.1.1 Motivation
- •17.1.2 Platform
- •17.1.3 Overview
- •17.1.4 Design
- •Simulation
- •Quantification
- •Experiment Design
- •Modeled Detectors (. Fig. 17.1)
- •Window Type (. Fig. 17.2)
- •The Optimal Working Distance (. Figs. 17.3 and 17.4)
- •Elevation Angle
- •Sample-to-Detector Distance
- •Detector Area
- •Crystal Thickness
- •Number of Channels, Energy Scale, and Zero Offset
- •Resolution at Mn Kα (Approximate)
- •Azimuthal Angle
- •Gold Layer, Aluminum Layer, Nickel Layer
- •Dead Layer
- •Zero Strobe Discriminator (. Figs. 17.7 and 17.8)
- •Material Editor Dialog (. Figs. 17.9, 17.10, 17.11, 17.12, 17.13, and 17.14)
- •17.2.1 Introduction
- •17.2.2 Monte Carlo Simulation
- •17.2.4 Optional Tables
- •References
- •18: Qualitative Elemental Analysis by Energy Dispersive X-Ray Spectrometry
- •18.1 Quality Assurance Issues for Qualitative Analysis: EDS Calibration
- •18.2 Principles of Qualitative EDS Analysis
- •Exciting Characteristic X-Rays
- •Fluorescence Yield
- •X-ray Absorption
- •Si Escape Peak
- •Coincidence Peaks
- •18.3 Performing Manual Qualitative Analysis
- •Beam Energy
- •Choosing the EDS Resolution (Detector Time Constant)
- •Obtaining Adequate Counts
- •18.4.1 Employ the Available Software Tools
- •18.4.3 Lower Photon Energy Region
- •18.4.5 Checking Your Work
- •18.5 A Worked Example of Manual Peak Identification
- •References
- •19.1 What Is a k-ratio?
- •19.3 Sets of k-ratios
- •19.5 The Analytical Total
- •19.6 Normalization
- •19.7.1 Oxygen by Assumed Stoichiometry
- •19.7.3 Element by Difference
- •19.8 Ways of Reporting Composition
- •19.8.1 Mass Fraction
- •19.8.2 Atomic Fraction
- •19.8.3 Stoichiometry
- •19.8.4 Oxide Fractions
- •Example Calculations
- •19.9 The Accuracy of Quantitative Electron-Excited X-ray Microanalysis
- •19.9.1 Standards-Based k-ratio Protocol
- •19.9.2 “Standardless Analysis”
- •19.10 Appendix
- •19.10.1 The Need for Matrix Corrections To Achieve Quantitative Analysis
- •19.10.2 The Physical Origin of Matrix Effects
- •19.10.3 ZAF Factors in Microanalysis
- •X-ray Generation With Depth, φ(ρz)
- •X-ray Absorption Effect, A
- •X-ray Fluorescence, F
- •References
- •20.2 Instrumentation Requirements
- •20.2.1 Choosing the EDS Parameters
- •EDS Spectrum Channel Energy Width and Spectrum Energy Span
- •EDS Time Constant (Resolution and Throughput)
- •EDS Calibration
- •EDS Solid Angle
- •20.2.2 Choosing the Beam Energy, E0
- •20.2.3 Measuring the Beam Current
- •20.2.4 Choosing the Beam Current
- •Optimizing Analysis Strategy
- •20.3.4 Ba-Ti Interference in BaTiSi3O9
- •20.4 The Need for an Iterative Qualitative and Quantitative Analysis Strategy
- •20.4.2 Analysis of a Stainless Steel
- •20.5 Is the Specimen Homogeneous?
- •20.6 Beam-Sensitive Specimens
- •20.6.1 Alkali Element Migration
- •20.6.2 Materials Subject to Mass Loss During Electron Bombardment—the Marshall-Hall Method
- •Thin Section Analysis
- •Bulk Biological and Organic Specimens
- •References
- •21: Trace Analysis by SEM/EDS
- •21.1 Limits of Detection for SEM/EDS Microanalysis
- •21.2.1 Estimating CDL from a Trace or Minor Constituent from Measuring a Known Standard
- •21.2.2 Estimating CDL After Determination of a Minor or Trace Constituent with Severe Peak Interference from a Major Constituent
- •21.3 Measurements of Trace Constituents by Electron-Excited Energy Dispersive X-ray Spectrometry
- •The Inevitable Physics of Remote Excitation Within the Specimen: Secondary Fluorescence Beyond the Electron Interaction Volume
- •Simulation of Long-Range Secondary X-ray Fluorescence
- •NIST DTSA II Simulation: Vertical Interface Between Two Regions of Different Composition in a Flat Bulk Target
- •NIST DTSA II Simulation: Cubic Particle Embedded in a Bulk Matrix
- •21.5 Summary
- •References
- •22.1.2 Low Beam Energy Analysis Range
- •22.2 Advantage of Low Beam Energy X-Ray Microanalysis
- •22.2.1 Improved Spatial Resolution
- •22.3 Challenges and Limitations of Low Beam Energy X-Ray Microanalysis
- •22.3.1 Reduced Access to Elements
- •22.3.3 At Low Beam Energy, Almost Everything Is Found To Be Layered
- •Analysis of Surface Contamination
- •References
- •23: Analysis of Specimens with Special Geometry: Irregular Bulk Objects and Particles
- •23.2.1 No Chemical Etching
- •23.3 Consequences of Attempting Analysis of Bulk Materials With Rough Surfaces
- •23.4.1 The Raw Analytical Total
- •23.4.2 The Shape of the EDS Spectrum
- •23.5 Best Practices for Analysis of Rough Bulk Samples
- •23.6 Particle Analysis
- •Particle Sample Preparation: Bulk Substrate
- •The Importance of Beam Placement
- •Overscanning
- •“Particle Mass Effect”
- •“Particle Absorption Effect”
- •The Analytical Total Reveals the Impact of Particle Effects
- •Does Overscanning Help?
- •23.6.6 Peak-to-Background (P/B) Method
- •Specimen Geometry Severely Affects the k-ratio, but Not the P/B
- •Using the P/B Correspondence
- •23.7 Summary
- •References
- •24: Compositional Mapping
- •24.2 X-Ray Spectrum Imaging
- •24.2.1 Utilizing XSI Datacubes
- •24.2.2 Derived Spectra
- •SUM Spectrum
- •MAXIMUM PIXEL Spectrum
- •24.3 Quantitative Compositional Mapping
- •24.4 Strategy for XSI Elemental Mapping Data Collection
- •24.4.1 Choosing the EDS Dead-Time
- •24.4.2 Choosing the Pixel Density
- •24.4.3 Choosing the Pixel Dwell Time
- •“Flash Mapping”
- •High Count Mapping
- •References
- •25.1 Gas Scattering Effects in the VPSEM
- •25.1.1 Why Doesn’t the EDS Collimator Exclude the Remote Skirt X-Rays?
- •25.2 What Can Be Done To Minimize gas Scattering in VPSEM?
- •25.2.2 Favorable Sample Characteristics
- •Particle Analysis
- •25.2.3 Unfavorable Sample Characteristics
- •References
- •26.1 Instrumentation
- •26.1.2 EDS Detector
- •26.1.3 Probe Current Measurement Device
- •Direct Measurement: Using a Faraday Cup and Picoammeter
- •A Faraday Cup
- •Electrically Isolated Stage
- •Indirect Measurement: Using a Calibration Spectrum
- •26.1.4 Conductive Coating
- •26.2 Sample Preparation
- •26.2.1 Standard Materials
- •26.2.2 Peak Reference Materials
- •26.3 Initial Set-Up
- •26.3.1 Calibrating the EDS Detector
- •Selecting a Pulse Process Time Constant
- •Energy Calibration
- •Quality Control
- •Sample Orientation
- •Detector Position
- •Probe Current
- •26.4 Collecting Data
- •26.4.1 Exploratory Spectrum
- •26.4.2 Experiment Optimization
- •26.4.3 Selecting Standards
- •26.4.4 Reference Spectra
- •26.4.5 Collecting Standards
- •26.4.6 Collecting Peak-Fitting References
- •26.5 Data Analysis
- •26.5.2 Quantification
- •26.6 Quality Check
- •Reference
- •27.2 Case Study: Aluminum Wire Failures in Residential Wiring
- •References
- •28: Cathodoluminescence
- •28.1 Origin
- •28.2 Measuring Cathodoluminescence
- •28.3 Applications of CL
- •28.3.1 Geology
- •Carbonado Diamond
- •Ancient Impact Zircons
- •28.3.2 Materials Science
- •Semiconductors
- •Lead-Acid Battery Plate Reactions
- •28.3.3 Organic Compounds
- •References
- •29.1.1 Single Crystals
- •29.1.2 Polycrystalline Materials
- •29.1.3 Conditions for Detecting Electron Channeling Contrast
- •Specimen Preparation
- •Instrument Conditions
- •29.2.1 Origin of EBSD Patterns
- •29.2.2 Cameras for EBSD Pattern Detection
- •29.2.3 EBSD Spatial Resolution
- •29.2.5 Steps in Typical EBSD Measurements
- •Sample Preparation for EBSD
- •Align Sample in the SEM
- •Check for EBSD Patterns
- •Adjust SEM and Select EBSD Map Parameters
- •Run the Automated Map
- •29.2.6 Display of the Acquired Data
- •29.2.7 Other Map Components
- •29.2.10 Application Example
- •Application of EBSD To Understand Meteorite Formation
- •29.2.11 Summary
- •Specimen Considerations
- •EBSD Detector
- •Selection of Candidate Crystallographic Phases
- •Microscope Operating Conditions and Pattern Optimization
- •Selection of EBSD Acquisition Parameters
- •Collect the Orientation Map
- •References
- •30.1 Introduction
- •30.2 Ion–Solid Interactions
- •30.3 Focused Ion Beam Systems
- •30.5 Preparation of Samples for SEM
- •30.5.1 Cross-Section Preparation
- •30.5.2 FIB Sample Preparation for 3D Techniques and Imaging
- •30.6 Summary
- •References
- •31: Ion Beam Microscopy
- •31.1 What Is So Useful About Ions?
- •31.2 Generating Ion Beams
- •31.3 Signal Generation in the HIM
- •31.5 Patterning with Ion Beams
- •31.7 Chemical Microanalysis with Ion Beams
- •References
- •Appendix
- •A Database of Electron–Solid Interactions
- •A Database of Electron–Solid Interactions
- •Introduction
- •Backscattered Electrons
- •Secondary Yields
- •Stopping Powers
- •X-ray Ionization Cross Sections
- •Conclusions
- •References
- •Index
- •Reference List
- •Index
\238 Chapter 17 · DTSA-II EDS Software
that go into designing a good measurement are subtle. How does one select the optimal beam energy? How does one select the best materials to use as standards? How does one determine when a reference spectrum1 is needed in addition to the standard spectra? How long an acquisition is required to produce the desired measurement precision? What limits of detection can I expect to achieve? Do I want to optimize accuracy or simply precision? Am I interested in minimizing the total error budget or am I interested in optimizing the measurement of one (or a couple of) elements?
In fact, many of these decisions are interrelated in subtle ways. Increasing the beam energy will often improve precision (more counts) but will reduce accuracy (more absorption). The best standard for a precision measurement is likely a pure element while the best standard for an accurate measurement is likely a material similar to the unknown.
Then we must also consider subtle interactions between elements. If the emission from one element falls near in energy to the absorption edges of another element, accuracy may be reduced due to complex near edge absorption effects. All the different considerations make the mind reel and intimidate all but the most confident practitioners of the art.
DTSA-II addresses these problems through an experiment design tool. The experiment design tool calculates the uncertainty budget for an ensemble of different alternative measurement protocols. It then suggests the experiment protocol which optimizes the uncertainty budget. It outlines which spectra need to be acquired and the doses necessary to achieve the user’s desired measurement precision. This is then presented in the report page as a recipe that the analyst can taking into the laboratory.
Experiment design builds upon an expert’s understanding of the quantification process and makes extensive use of spectrum simulation. Through spectrum simulation, DTSA-II can understand how peak interferences and detector performance will influence the measurement process. Through spectrum simulation carefully calibrated to the performance of your detectors, the experiment optimizer can
17 predict how much dose (probe current x time) is required. Often the result is good news. We often spend much too much time on some spectra and too little on others.
17.1.6\ Introduction toFundamental Concepts
For the most part, the functionality of DTSA-II will be introduced along with the relevant microanalytical concept.
However, there are a handful of concepts which provide a skeleton around which the rest of the program is built. It is necessary to understand these concepts to use the program effectively.
1\ Don’t worry if you don’t understand the difference between a reference and a standard spectrum. This will be explained later.
DTSA-II was designed around the idea of being able simulate what you measure. With DTSA-II, it is possible to simulate the full measurement process for both simple and complex samples. You can simulate the spectrum from an unknown material and from the standard materials necessary to quantify the unknown spectrum. You can quantify the simulated spectra just like you can quantify measured spectra. This ability allows you to understand the measurement process in ways that are simply not possible otherwise. It is possible to investigate how changes in sample geometry or contamination or coatings will influence the results. It is possible to visualize the electron trajectories and X-ray production and absorption.
However to do this, it is necessary to be able to model the sample, the physics of electron transport, atomic ionization and X-ray production and transport, and the detection of X-rays. The physics of electrons and X-rays is not perfectly known, but at least it doesn’t change between one instrument and another. The biggest change between instruments is the X-ray detection process. Not all detectors are created equal.
To compensate for the detection process, DTSA-II builds algorithmic models of X-ray detectors based on the properties of the detector. These models are then used to convert the simulated X-ray flux into a simulated measured spectrum. The better these models, the better DTSA-II is able to simulate and quantify spectra.
Modeled Detectors (. Fig. 17.1)
To make optimal use of DTSA-II, you will need to create a detector model to describe each of your X-ray detectors. Each detector model reflects the performance of a specific detector in a specific instrument at a specific resolution/ throughput setting. Each physical detector should be associated with at least one detector model. A single physical detector may have more than one detector model if the detector is regularly operated at different resolution / throughput settings.
Some of the information necessary to build the detector model is readily available from product literature or from a call to the vendor. Unfortunately, some pieces of information are less easy to discover. Some require access to very specialized samples or equipment, but fortunately, accepting the default values won’t overly affect utility of the simulated results. . Table 17.1 identifies which values are critical and which are less critical.
Detector models are created in the “Preferences” dialog which is accessed through the “File →Preferences” main menu item. The tree view on the left side of the dialog allows you to navigate through various preference pages. By default, a root node labeled “Instruments and Detectors” is created with a branch called “Probe” and a leaf node called “Si(Li).”
The branch “Probe” reflects a very basic traditional SEM/ microprobe. The leaf “Si(Li)” reflects a typical lithium-drifted silicon detector with a ultra-thin window and a resolution of 132 eV at Mn Kα. You can examine the definition of this detector to determine which pieces of information are necessary to fully describe a detector.
239 |
17 |
17.1 · Getting Started With NIST DTSA-II
. Fig. 17.1 The preferences dialog showing a panel containing properties of a detector
. Table 17.1 This table identifies parameters that have a critical influence on simulated spectra and those that have a less critical influence. You should be able to determine the correct value of the critical parameters from vendor literature or a call to the vendor. The vendor may be able to provide the less critical values too but if they can’t just accept the defaults
Critical |
Less critical |
|
|
Window type |
Gold layer (accept the default) |
|
|
Elevation angle |
Aluminum layer (accept the default) |
Optimal working distance |
Nickel layer (accept the default) |
Sample-to-detector distance (estimate) |
Dead layer (accept the default) |
Detector area |
Zero strobe discriminator (easy to estimate) |
Crystal thickness |
|
Number of channels |
|
Energy scale (nominal) |
|
Zero offset (nominal) |
|
Resolution at Mn Kα (approximate) |
|
Azimuthal angle |
|
\240 Chapter 17 · DTSA-II EDS Software
Some pieces of information are specific to your instrument and the way the detector is mounted in the instrument. Window-type, detector area, crystal thickness, resolution, gold layer thickness, aluminum layer thickness, nickel layer thickness, and dead layer thickness are model specific properties of the detector. Elevation angle, optimal working distance, sample-to-detector distance, and azimuthal angle are determined by how the detector is mounted in your instrument. The energy scale, zero offset, and the resolution are dependent upon hardware settings that are usually configured within the vendor’s acquisition software. The oldest systems may have physical hardware switches.
Window Type (. Fig. 17.2)
As is discussed elsewhere, most detectors are protected from contamination by an X-ray transparent window. Older windows were made of ultrathin beryllium foils or occasionally boron-nitride or diamond films. Almost all modern detectors use ultrathin polymer windows although the recently introduced silicon nitride (Si3N4) windows show great promise.
Each type of window has a different efficiency as a function of energy. The largest variation in efficiency is seen below
1 keV. Here the absorption edges in the elements making up the windows can lead to large jumps in efficiency over narrow energy ranges. Diamond represents an extreme example in which the absorption edge at 0.283 keV leads to a three order-of-magnitude change in efficiency.
Your vendor should be able to tell you the make and model of the window on your detector.
The Optimal Working Distance (. Figs. 17.3 and 17.4)
The position and orientation of your EDS detector is optimized for a certain sample position. Typically, the optimal sample position is located on the electron-beam axis at an optimal working distance. At this distance, the effective elevation angle equals the nominal elevation angle. Sometimes, the optimal working distance will be specified in the drawings the EDS vendorusedtodesignthedetectormountinghardware(. Fig.17.4).
Other times, it is necessary to estimate the optimal working distance finding the sample position that produces the largest X-ray flux. The optimal working distance is measured on the same scale as the focal distance since the working distance value recorded in spectrum files is typically this value.
a |
b |
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10 100 eV Beryllium (5 mm)
Beryllium (12 mm) Moxtek Ap 1.3 Moxtek Ap 3.3 (model) Diamond (0.45 mm)
No window
17 c
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10000 |
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Beryllium (8 mm) |
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0.2 |
Beryllium (25 mm) |
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0.1 |
Moxtek Ap 1.7 |
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|
Moxtek Ap 3.3 (manufacturer’s table) |
0.0 |
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Boron nitride (0.25 mm) |
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10 |
d
1.0 |
1.0 |
0.9 |
0.9 |
0.8 |
0.8 |
0.7 |
0.7 |
0.6 |
0.6 |
0.5 |
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10 |
100 |
eV |
1000 |
10000 |
10 |
|
|
|
Moxtek AP 1.3 |
Moxtek AP 1.7 |
|
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|
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||
|
|
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|
||
|
|
Moxtek AP 3.3 (model) |
|
Moxtek AP 3.3 (manufacturer’s table) |
|
|
|
|
|
|
100 |
|
eV |
1000 |
10000 |
|
Beryllium (5 mm) |
Beryllium (12 mm) |
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Beryllium (8 mm) |
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|
Beryllium (25 mm) |
|
|
|
|
|
100 |
eV |
1000 |
10000 |
||
Beryllium (8 mm) |
Moxtek Ap 3.3 (model) |
||||
|
|
||||
|
|
||||
Diamond (0.45 mm) |
|
|
Boron nitride (0.25 mm) |
||
|
|
. Fig. 17.2 a–d: Window transmission efficiency as a function of photon energy
17.1 · Getting Started With NIST DTSA-II
. Fig. 17.3 Definitions of geometric parameters
axis Optic
Nominal elevation
E ective elevation
241
Optimal working distance
Detector |
axis |
|
17
Actual working distance
. Fig. 17.4 Example of vendor-supplied schematics showing the optimal working distance (17 mm) and the sample-to-detector distance (34 mm) for a microscope with multiple detectors (Source: TESCAN)
9,775°
0 .
569
17
34,01 |
16,433 |