- •Preface
- •Imaging Microscopic Features
- •Measuring the Crystal Structure
- •References
- •Contents
- •1.4 Simulating the Effects of Elastic Scattering: Monte Carlo Calculations
- •What Are the Main Features of the Beam Electron Interaction Volume?
- •How Does the Interaction Volume Change with Composition?
- •How Does the Interaction Volume Change with Incident Beam Energy?
- •How Does the Interaction Volume Change with Specimen Tilt?
- •1.5 A Range Equation To Estimate the Size of the Interaction Volume
- •References
- •2: Backscattered Electrons
- •2.1 Origin
- •2.2.1 BSE Response to Specimen Composition (η vs. Atomic Number, Z)
- •SEM Image Contrast with BSE: “Atomic Number Contrast”
- •SEM Image Contrast: “BSE Topographic Contrast—Number Effects”
- •2.2.3 Angular Distribution of Backscattering
- •Beam Incident at an Acute Angle to the Specimen Surface (Specimen Tilt > 0°)
- •SEM Image Contrast: “BSE Topographic Contrast—Trajectory Effects”
- •2.2.4 Spatial Distribution of Backscattering
- •Depth Distribution of Backscattering
- •Radial Distribution of Backscattered Electrons
- •2.3 Summary
- •References
- •3: Secondary Electrons
- •3.1 Origin
- •3.2 Energy Distribution
- •3.3 Escape Depth of Secondary Electrons
- •3.8 Spatial Characteristics of Secondary Electrons
- •References
- •4: X-Rays
- •4.1 Overview
- •4.2 Characteristic X-Rays
- •4.2.1 Origin
- •4.2.2 Fluorescence Yield
- •4.2.3 X-Ray Families
- •4.2.4 X-Ray Nomenclature
- •4.2.6 Characteristic X-Ray Intensity
- •Isolated Atoms
- •X-Ray Production in Thin Foils
- •X-Ray Intensity Emitted from Thick, Solid Specimens
- •4.3 X-Ray Continuum (bremsstrahlung)
- •4.3.1 X-Ray Continuum Intensity
- •4.3.3 Range of X-ray Production
- •4.4 X-Ray Absorption
- •4.5 X-Ray Fluorescence
- •References
- •5.1 Electron Beam Parameters
- •5.2 Electron Optical Parameters
- •5.2.1 Beam Energy
- •Landing Energy
- •5.2.2 Beam Diameter
- •5.2.3 Beam Current
- •5.2.4 Beam Current Density
- •5.2.5 Beam Convergence Angle, α
- •5.2.6 Beam Solid Angle
- •5.2.7 Electron Optical Brightness, β
- •Brightness Equation
- •5.2.8 Focus
- •Astigmatism
- •5.3 SEM Imaging Modes
- •5.3.1 High Depth-of-Field Mode
- •5.3.2 High-Current Mode
- •5.3.3 Resolution Mode
- •5.3.4 Low-Voltage Mode
- •5.4 Electron Detectors
- •5.4.1 Important Properties of BSE and SE for Detector Design and Operation
- •Abundance
- •Angular Distribution
- •Kinetic Energy Response
- •5.4.2 Detector Characteristics
- •Angular Measures for Electron Detectors
- •Elevation (Take-Off) Angle, ψ, and Azimuthal Angle, ζ
- •Solid Angle, Ω
- •Energy Response
- •Bandwidth
- •5.4.3 Common Types of Electron Detectors
- •Backscattered Electrons
- •Passive Detectors
- •Scintillation Detectors
- •Semiconductor BSE Detectors
- •5.4.4 Secondary Electron Detectors
- •Everhart–Thornley Detector
- •Through-the-Lens (TTL) Electron Detectors
- •TTL SE Detector
- •TTL BSE Detector
- •Measuring the DQE: BSE Semiconductor Detector
- •References
- •6: Image Formation
- •6.1 Image Construction by Scanning Action
- •6.2 Magnification
- •6.3 Making Dimensional Measurements With the SEM: How Big Is That Feature?
- •Using a Calibrated Structure in ImageJ-Fiji
- •6.4 Image Defects
- •6.4.1 Projection Distortion (Foreshortening)
- •6.4.2 Image Defocusing (Blurring)
- •6.5 Making Measurements on Surfaces With Arbitrary Topography: Stereomicroscopy
- •6.5.1 Qualitative Stereomicroscopy
- •Fixed beam, Specimen Position Altered
- •Fixed Specimen, Beam Incidence Angle Changed
- •6.5.2 Quantitative Stereomicroscopy
- •Measuring a Simple Vertical Displacement
- •References
- •7: SEM Image Interpretation
- •7.1 Information in SEM Images
- •7.2.2 Calculating Atomic Number Contrast
- •Establishing a Robust Light-Optical Analogy
- •Getting It Wrong: Breaking the Light-Optical Analogy of the Everhart–Thornley (Positive Bias) Detector
- •Deconstructing the SEM/E–T Image of Topography
- •SUM Mode (A + B)
- •DIFFERENCE Mode (A−B)
- •References
- •References
- •9: Image Defects
- •9.1 Charging
- •9.1.1 What Is Specimen Charging?
- •9.1.3 Techniques to Control Charging Artifacts (High Vacuum Instruments)
- •Observing Uncoated Specimens
- •Coating an Insulating Specimen for Charge Dissipation
- •Choosing the Coating for Imaging Morphology
- •9.2 Radiation Damage
- •9.3 Contamination
- •References
- •10: High Resolution Imaging
- •10.2 Instrumentation Considerations
- •10.4.1 SE Range Effects Produce Bright Edges (Isolated Edges)
- •10.4.4 Too Much of a Good Thing: The Bright Edge Effect Hinders Locating the True Position of an Edge for Critical Dimension Metrology
- •10.5.1 Beam Energy Strategies
- •Low Beam Energy Strategy
- •High Beam Energy Strategy
- •Making More SE1: Apply a Thin High-δ Metal Coating
- •Making Fewer BSEs, SE2, and SE3 by Eliminating Bulk Scattering From the Substrate
- •10.6 Factors That Hinder Achieving High Resolution
- •10.6.2 Pathological Specimen Behavior
- •Contamination
- •Instabilities
- •References
- •11: Low Beam Energy SEM
- •11.3 Selecting the Beam Energy to Control the Spatial Sampling of Imaging Signals
- •11.3.1 Low Beam Energy for High Lateral Resolution SEM
- •11.3.2 Low Beam Energy for High Depth Resolution SEM
- •11.3.3 Extremely Low Beam Energy Imaging
- •References
- •12.1.1 Stable Electron Source Operation
- •12.1.2 Maintaining Beam Integrity
- •12.1.4 Minimizing Contamination
- •12.3.1 Control of Specimen Charging
- •12.5 VPSEM Image Resolution
- •References
- •13: ImageJ and Fiji
- •13.1 The ImageJ Universe
- •13.2 Fiji
- •13.3 Plugins
- •13.4 Where to Learn More
- •References
- •14: SEM Imaging Checklist
- •14.1.1 Conducting or Semiconducting Specimens
- •14.1.2 Insulating Specimens
- •14.2 Electron Signals Available
- •14.2.1 Beam Electron Range
- •14.2.2 Backscattered Electrons
- •14.2.3 Secondary Electrons
- •14.3 Selecting the Electron Detector
- •14.3.2 Backscattered Electron Detectors
- •14.3.3 “Through-the-Lens” Detectors
- •14.4 Selecting the Beam Energy for SEM Imaging
- •14.4.4 High Resolution SEM Imaging
- •Strategy 1
- •Strategy 2
- •14.5 Selecting the Beam Current
- •14.5.1 High Resolution Imaging
- •14.5.2 Low Contrast Features Require High Beam Current and/or Long Frame Time to Establish Visibility
- •14.6 Image Presentation
- •14.6.1 “Live” Display Adjustments
- •14.6.2 Post-Collection Processing
- •14.7 Image Interpretation
- •14.7.1 Observer’s Point of View
- •14.7.3 Contrast Encoding
- •14.8.1 VPSEM Advantages
- •14.8.2 VPSEM Disadvantages
- •15: SEM Case Studies
- •15.1 Case Study: How High Is That Feature Relative to Another?
- •15.2 Revealing Shallow Surface Relief
- •16.1.2 Minor Artifacts: The Si-Escape Peak
- •16.1.3 Minor Artifacts: Coincidence Peaks
- •16.1.4 Minor Artifacts: Si Absorption Edge and Si Internal Fluorescence Peak
- •16.2 “Best Practices” for Electron-Excited EDS Operation
- •16.2.1 Operation of the EDS System
- •Choosing the EDS Time Constant (Resolution and Throughput)
- •Choosing the Solid Angle of the EDS
- •Selecting a Beam Current for an Acceptable Level of System Dead-Time
- •16.3.1 Detector Geometry
- •16.3.2 Process Time
- •16.3.3 Optimal Working Distance
- •16.3.4 Detector Orientation
- •16.3.5 Count Rate Linearity
- •16.3.6 Energy Calibration Linearity
- •16.3.7 Other Items
- •16.3.8 Setting Up a Quality Control Program
- •Using the QC Tools Within DTSA-II
- •Creating a QC Project
- •Linearity of Output Count Rate with Live-Time Dose
- •Resolution and Peak Position Stability with Count Rate
- •Solid Angle for Low X-ray Flux
- •Maximizing Throughput at Moderate Resolution
- •References
- •17: DTSA-II EDS Software
- •17.1 Getting Started With NIST DTSA-II
- •17.1.1 Motivation
- •17.1.2 Platform
- •17.1.3 Overview
- •17.1.4 Design
- •Simulation
- •Quantification
- •Experiment Design
- •Modeled Detectors (. Fig. 17.1)
- •Window Type (. Fig. 17.2)
- •The Optimal Working Distance (. Figs. 17.3 and 17.4)
- •Elevation Angle
- •Sample-to-Detector Distance
- •Detector Area
- •Crystal Thickness
- •Number of Channels, Energy Scale, and Zero Offset
- •Resolution at Mn Kα (Approximate)
- •Azimuthal Angle
- •Gold Layer, Aluminum Layer, Nickel Layer
- •Dead Layer
- •Zero Strobe Discriminator (. Figs. 17.7 and 17.8)
- •Material Editor Dialog (. Figs. 17.9, 17.10, 17.11, 17.12, 17.13, and 17.14)
- •17.2.1 Introduction
- •17.2.2 Monte Carlo Simulation
- •17.2.4 Optional Tables
- •References
- •18: Qualitative Elemental Analysis by Energy Dispersive X-Ray Spectrometry
- •18.1 Quality Assurance Issues for Qualitative Analysis: EDS Calibration
- •18.2 Principles of Qualitative EDS Analysis
- •Exciting Characteristic X-Rays
- •Fluorescence Yield
- •X-ray Absorption
- •Si Escape Peak
- •Coincidence Peaks
- •18.3 Performing Manual Qualitative Analysis
- •Beam Energy
- •Choosing the EDS Resolution (Detector Time Constant)
- •Obtaining Adequate Counts
- •18.4.1 Employ the Available Software Tools
- •18.4.3 Lower Photon Energy Region
- •18.4.5 Checking Your Work
- •18.5 A Worked Example of Manual Peak Identification
- •References
- •19.1 What Is a k-ratio?
- •19.3 Sets of k-ratios
- •19.5 The Analytical Total
- •19.6 Normalization
- •19.7.1 Oxygen by Assumed Stoichiometry
- •19.7.3 Element by Difference
- •19.8 Ways of Reporting Composition
- •19.8.1 Mass Fraction
- •19.8.2 Atomic Fraction
- •19.8.3 Stoichiometry
- •19.8.4 Oxide Fractions
- •Example Calculations
- •19.9 The Accuracy of Quantitative Electron-Excited X-ray Microanalysis
- •19.9.1 Standards-Based k-ratio Protocol
- •19.9.2 “Standardless Analysis”
- •19.10 Appendix
- •19.10.1 The Need for Matrix Corrections To Achieve Quantitative Analysis
- •19.10.2 The Physical Origin of Matrix Effects
- •19.10.3 ZAF Factors in Microanalysis
- •X-ray Generation With Depth, φ(ρz)
- •X-ray Absorption Effect, A
- •X-ray Fluorescence, F
- •References
- •20.2 Instrumentation Requirements
- •20.2.1 Choosing the EDS Parameters
- •EDS Spectrum Channel Energy Width and Spectrum Energy Span
- •EDS Time Constant (Resolution and Throughput)
- •EDS Calibration
- •EDS Solid Angle
- •20.2.2 Choosing the Beam Energy, E0
- •20.2.3 Measuring the Beam Current
- •20.2.4 Choosing the Beam Current
- •Optimizing Analysis Strategy
- •20.3.4 Ba-Ti Interference in BaTiSi3O9
- •20.4 The Need for an Iterative Qualitative and Quantitative Analysis Strategy
- •20.4.2 Analysis of a Stainless Steel
- •20.5 Is the Specimen Homogeneous?
- •20.6 Beam-Sensitive Specimens
- •20.6.1 Alkali Element Migration
- •20.6.2 Materials Subject to Mass Loss During Electron Bombardment—the Marshall-Hall Method
- •Thin Section Analysis
- •Bulk Biological and Organic Specimens
- •References
- •21: Trace Analysis by SEM/EDS
- •21.1 Limits of Detection for SEM/EDS Microanalysis
- •21.2.1 Estimating CDL from a Trace or Minor Constituent from Measuring a Known Standard
- •21.2.2 Estimating CDL After Determination of a Minor or Trace Constituent with Severe Peak Interference from a Major Constituent
- •21.3 Measurements of Trace Constituents by Electron-Excited Energy Dispersive X-ray Spectrometry
- •The Inevitable Physics of Remote Excitation Within the Specimen: Secondary Fluorescence Beyond the Electron Interaction Volume
- •Simulation of Long-Range Secondary X-ray Fluorescence
- •NIST DTSA II Simulation: Vertical Interface Between Two Regions of Different Composition in a Flat Bulk Target
- •NIST DTSA II Simulation: Cubic Particle Embedded in a Bulk Matrix
- •21.5 Summary
- •References
- •22.1.2 Low Beam Energy Analysis Range
- •22.2 Advantage of Low Beam Energy X-Ray Microanalysis
- •22.2.1 Improved Spatial Resolution
- •22.3 Challenges and Limitations of Low Beam Energy X-Ray Microanalysis
- •22.3.1 Reduced Access to Elements
- •22.3.3 At Low Beam Energy, Almost Everything Is Found To Be Layered
- •Analysis of Surface Contamination
- •References
- •23: Analysis of Specimens with Special Geometry: Irregular Bulk Objects and Particles
- •23.2.1 No Chemical Etching
- •23.3 Consequences of Attempting Analysis of Bulk Materials With Rough Surfaces
- •23.4.1 The Raw Analytical Total
- •23.4.2 The Shape of the EDS Spectrum
- •23.5 Best Practices for Analysis of Rough Bulk Samples
- •23.6 Particle Analysis
- •Particle Sample Preparation: Bulk Substrate
- •The Importance of Beam Placement
- •Overscanning
- •“Particle Mass Effect”
- •“Particle Absorption Effect”
- •The Analytical Total Reveals the Impact of Particle Effects
- •Does Overscanning Help?
- •23.6.6 Peak-to-Background (P/B) Method
- •Specimen Geometry Severely Affects the k-ratio, but Not the P/B
- •Using the P/B Correspondence
- •23.7 Summary
- •References
- •24: Compositional Mapping
- •24.2 X-Ray Spectrum Imaging
- •24.2.1 Utilizing XSI Datacubes
- •24.2.2 Derived Spectra
- •SUM Spectrum
- •MAXIMUM PIXEL Spectrum
- •24.3 Quantitative Compositional Mapping
- •24.4 Strategy for XSI Elemental Mapping Data Collection
- •24.4.1 Choosing the EDS Dead-Time
- •24.4.2 Choosing the Pixel Density
- •24.4.3 Choosing the Pixel Dwell Time
- •“Flash Mapping”
- •High Count Mapping
- •References
- •25.1 Gas Scattering Effects in the VPSEM
- •25.1.1 Why Doesn’t the EDS Collimator Exclude the Remote Skirt X-Rays?
- •25.2 What Can Be Done To Minimize gas Scattering in VPSEM?
- •25.2.2 Favorable Sample Characteristics
- •Particle Analysis
- •25.2.3 Unfavorable Sample Characteristics
- •References
- •26.1 Instrumentation
- •26.1.2 EDS Detector
- •26.1.3 Probe Current Measurement Device
- •Direct Measurement: Using a Faraday Cup and Picoammeter
- •A Faraday Cup
- •Electrically Isolated Stage
- •Indirect Measurement: Using a Calibration Spectrum
- •26.1.4 Conductive Coating
- •26.2 Sample Preparation
- •26.2.1 Standard Materials
- •26.2.2 Peak Reference Materials
- •26.3 Initial Set-Up
- •26.3.1 Calibrating the EDS Detector
- •Selecting a Pulse Process Time Constant
- •Energy Calibration
- •Quality Control
- •Sample Orientation
- •Detector Position
- •Probe Current
- •26.4 Collecting Data
- •26.4.1 Exploratory Spectrum
- •26.4.2 Experiment Optimization
- •26.4.3 Selecting Standards
- •26.4.4 Reference Spectra
- •26.4.5 Collecting Standards
- •26.4.6 Collecting Peak-Fitting References
- •26.5 Data Analysis
- •26.5.2 Quantification
- •26.6 Quality Check
- •Reference
- •27.2 Case Study: Aluminum Wire Failures in Residential Wiring
- •References
- •28: Cathodoluminescence
- •28.1 Origin
- •28.2 Measuring Cathodoluminescence
- •28.3 Applications of CL
- •28.3.1 Geology
- •Carbonado Diamond
- •Ancient Impact Zircons
- •28.3.2 Materials Science
- •Semiconductors
- •Lead-Acid Battery Plate Reactions
- •28.3.3 Organic Compounds
- •References
- •29.1.1 Single Crystals
- •29.1.2 Polycrystalline Materials
- •29.1.3 Conditions for Detecting Electron Channeling Contrast
- •Specimen Preparation
- •Instrument Conditions
- •29.2.1 Origin of EBSD Patterns
- •29.2.2 Cameras for EBSD Pattern Detection
- •29.2.3 EBSD Spatial Resolution
- •29.2.5 Steps in Typical EBSD Measurements
- •Sample Preparation for EBSD
- •Align Sample in the SEM
- •Check for EBSD Patterns
- •Adjust SEM and Select EBSD Map Parameters
- •Run the Automated Map
- •29.2.6 Display of the Acquired Data
- •29.2.7 Other Map Components
- •29.2.10 Application Example
- •Application of EBSD To Understand Meteorite Formation
- •29.2.11 Summary
- •Specimen Considerations
- •EBSD Detector
- •Selection of Candidate Crystallographic Phases
- •Microscope Operating Conditions and Pattern Optimization
- •Selection of EBSD Acquisition Parameters
- •Collect the Orientation Map
- •References
- •30.1 Introduction
- •30.2 Ion–Solid Interactions
- •30.3 Focused Ion Beam Systems
- •30.5 Preparation of Samples for SEM
- •30.5.1 Cross-Section Preparation
- •30.5.2 FIB Sample Preparation for 3D Techniques and Imaging
- •30.6 Summary
- •References
- •31: Ion Beam Microscopy
- •31.1 What Is So Useful About Ions?
- •31.2 Generating Ion Beams
- •31.3 Signal Generation in the HIM
- •31.5 Patterning with Ion Beams
- •31.7 Chemical Microanalysis with Ion Beams
- •References
- •Appendix
- •A Database of Electron–Solid Interactions
- •A Database of Electron–Solid Interactions
- •Introduction
- •Backscattered Electrons
- •Secondary Yields
- •Stopping Powers
- •X-ray Ionization Cross Sections
- •Conclusions
- •References
- •Index
- •Reference List
- •Index
295 |
19 |
19.9 · The Accuracy of Quantitative Electron-Excited X-ray Microanalysis
. Table 19.1 Three different ways to report the composition of NIST SRM 470 glass K412.
K412 Glass
Element |
Mg |
Al |
Si |
Ca |
Fe |
O |
Sum |
Valence |
|
|
|
|
|
−2 |
|
2 |
3 |
1 |
2 |
2 |
– |
||
Atomic weight |
24.305 |
26.9815 |
28.085 |
40.078 |
55.845 |
15.999 |
|
(AMU) |
|
|
|
|
|
|
|
Oxide fraction |
0.1933 ± 0.0020 |
0.0927 ± 0.0020 |
0.4535 ± 0.0020 0.1525 ± 0.0020 |
0.0996 ± 0.0020 |
– |
0.9916 |
|
|
MgO |
Al2O3 |
Si02 |
CaO |
FeO |
|
|
Mass fraction |
0.1166 |
0.0491 |
0 2120 |
0.1090 |
0.0774 |
0 4276 |
0.9916 |
Atomic |
0.1066 |
0.0404 |
0.1678 |
0.0604 |
0.0308 |
0.5940 |
1 |
fraction |
|
|
|
|
|
|
|
Note the analytic total is less than 1, indicating an imprecision in the certified value
19.9\ The Accuracy of Quantitative Electron-
Excited X-ray Microanalysis
19.9.1\ Standards-Based k-ratio Protocol
Quantitative electron-excited X-ray microanalysis following the standards-based k-ratio protocol is a relative not an absolute analysis method. The unknown is measured relative to standards of well known composition such as pure elements and stoichiometric compounds with fixed atom ratios, for example, FeS2. The accuracy of the method can only be tested by analyzing materials whose composition is known from independent (and ideally absolute) analysis methods and whose composition has been found to be homogeneous at the sub-micrometer scale. There are limited numbers of special materials that fit these strict compositional requirements to qualify as certified reference materials for electron beam X-ray microanalysis, including certain metal alloys, intermetallic compounds, and glasses. Limited numbers of these materials are available from national standards institutions, such as the National Institute of Standards and Technology (U.S.) (e.g., Marinenko et al. 1990) and the European Commission Community Bureau of Reference (e.g., Saunders et al. 2004). Certain mineral species have been characterized to serve as standards, which are of particular use to the geochemistry community, by the Smithsonian Institution. These certified reference materials and related materials such as minerals can serve directly as standards for analyses, but their other important function is to serve as challenge materials to test the quantification methods. Additional materials suitable for testing the method include stoichiometric compounds with formulae that define specific, unvarying compositions; that is, the same materials that can also be used as standards. Thus, FeS2 could be used as an “unknown” for a test analysis with Fe and CuS as the standards, while CuS could be analyzed with Cu and FeS2 as standards. From such analyses of certified reference materials and other test materials, the relative deviation from the expected value (RDEV)
(also referred to as “relative error”) is calculated with the “expected” value taken as the stoichiometric formula value or the value obtained from an “absolute” analytical method, such as gravimetric analysis:
|
( |
Analyzed value − expected value |
) |
|
×100% |
|
|
RDEV = |
expected value |
|
|
(19.14) |
|||
|
|
|
|
|
\ |
||
|
|
|
|
|
|
|
Note that by this equation a positive RDEV indicates an overestimate of the concentration, while a negative RDEV indicates an underestimate. By analyzing many test materials spanning the periodic table and determining the relative deviation from the expected value (relative error), the analytical performance can be estimated. For example, early studies of quantitative electron probe microanalysis with wavelength dispersive X-ray spectrometry following the standards-based k-ratio protocol and ZAF matrix corrections produced a distribution of RDEV values (relative errors) such that 95% of the analyses were captured in an RDEV (relative error) range of ±5% relative, as shown in
. Fig. 19.1 (Yakowitz 1975).
Subsequent development and refinement of the matrix correction procedures by many researchers improved upon this level of accuracy. Pouchou and Pichoir (1991) described an advanced matrix correction model based upon extensive experimental measurements of the φ(ρz) description of the depth distribution of ionization. Incorporating explicit measurements for low energy photons, this approach has been especially successful for low photon energy X-rays which were subject to high absorption. A comparison of corrections of the same k-ratio dataset with their φ(ρz) method and with the conventional ZAF method showed significant narrowing of the RDEV distribution and elimination of significant large RDEV values, as shown in . Fig. 19.2. With this improvement, approximately 95 % of analyses fall within ±2.5 % RDEV.
7 Chapter 20 will illustrate examples of quantitative electron- excited X-ray microanalysis with silicon drift detector (SDD)-
EDS performed on flat bulk specimens following the k-ratio
\296 Chapter 19 · Quantitative Analysis: From k-ratio to Composition
NBS (1975) Binary data ZAF
60
50
40
Frequency |
30 |
|
|
|
20 |
10 |
|
|
|
|
|
|
0 |
|
|
|
|
|
|
-15 |
-10 |
-5 |
0 |
5 |
10 |
15 |
RDEV (%)
. Fig. 19.1 Histogram of relative deviation from expected value (relative error) for electron probe microanalysis with wavelength dispersive spectrometry following the k-ratio protocol with standards and ZAF corrections (Yakowitz 1975)
110
ZAF
Number of analyses
-0.8 |
-0.9 |
1. |
1.1 |
1.2 |
RDEV
110
PAP
19 analyses ofNumber
-0.8 |
-0.9 |
1. |
1.1 |
1.2 |
|
|
RDEV |
|
|
. Fig. 19.2 Comparison of quantitative analysis of an EPMA-WDS k = ratio database by conventional ZAF and by the PAP φ(ρz) model (Pouchou and Pichoir 1991)
protocol and PAP φ(ρz) matrix corrections with NIST DTSA-II. The level of accuracy achieved with this SDD-EDS approach fits within the RDEV histogram achieved with EPMAWDS for major, minor, and trace constituents, even when severe peak interference occurs. It should be noted that SDD-EDS is sufficiently stable with time that, providing a quality measurement protocol is in place to ensure that all measurements are made under identical conditions of beam energy, known dose, specimen orientation, and SDD-EDS performance, archived standards can be used without significant loss of accuracy.
19.9.2\ “Standardless Analysis”
Virtually all vendor analytical software includes the option for “standardless analysis.” Standardless analysis requires only the spectrum of the unknown, the list of elements identified during qualitative analysis, and the beam energy; and the software will report quantitative concentration values, including oxygen by assumed stoichiometry if desired. “Standardless analysis” is usually implemented as a “black box” tool without extensive documentation. The approach is the same as the standards-based analysis protocol: a k-ratio is the starting point, but the spectrum of the unknown only provides the numerator of the k-ratio. A “first principles physics” calculation of the standard intensity for the denominator of the k-ratio, while possible, is difficult because of the lack of accurate values of critical parameters in the equations for X-ray generation and propagation. Instead, the general approach employed throughout the EDS industry is the use of a library of remotely measured standards to provide the intensity for the denominator of the k-ratio. Pure element and binary compound standards are measured under defined conditions at several beam energies on a well characterized EDS. When standardless analysis is invoked, the appropriate elemental intensities are selected from this database of standards, and any missing elements not represented in the database are supplied by interpolation aided by the physical equations of X-ray generation and propagation. If a beam energy is requested for which reference values are not available in the database, the equations of the physics of X-ray generation are used to appropriately adjust the available intensities. Usually a reference spectrum that is locally measured on a pure element, for example, Mn or Cu, is used to compare the efficiency of the EDS on a channel-by-channel basis to the vendor EDS that was originally used to measure the standards library. Because of its simplicity of operation, standardless analysis enjoys great popularity. Probably 95 % or more of quantitative EDS analyses are performed with the standardless analysis procedure. While it is useful and is continually being improved, standardless analysis is subject to a substantially wider RDEV distribution than standards-based analysis with locally measured standards. Standardless analysis of a wide range of test materials produced the RDEV histogram shown in . Fig. 19.3 (Newbury et al. 1995). This distribution is such that 95 % of all analyses fall within a range of ±25 % relative. If this level of analytical accuracy is
297 |
19 |
19.9 · The Accuracy of Quantitative Electron-Excited X-ray Microanalysis
|
50 |
|
|
|
|
|
40 |
|
|
|
|
Frequency |
30 |
|
|
|
|
20 |
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10 |
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RDEV (%) |
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. Fig. 19.3 RDEV distribution observed for a vendor standardless analysis procedure (Newbury et al. 1995)
sufficient, then standardless analysis is an acceptable procedure, providing this RDEV distribution, or a version appropriate to the standardless analysis software supplied by the vendor, is used to inform those who will make use of the quantitative analyses of the possible range of the results. While the standardless protocol may eventually equal the performance of standards-based analysis, recent results for current versions of standardless analysis, reported in
. Fig. 19.4, suggest that a wide RDEV distribution is still being experienced, at least from some vendors.
It should be noted that when 95 % of all analyses fall within a range of ±25 % relative, it may often not be possible to correctly determine the formula of the major constituents of a stoichiometric compound. An example of this situation is presented in . Table 19.2, which gives the results of an SEM-EDS analysis of a YBa2Cu3O7-X single crystal by the k-ratio/standards protocol (NIST DTSA) compared to standardless analysis performed with two different vendors’ software. While the proper formula is recovered with the
. Fig. 19.4 a RDEV distribution observed for a vendor standardless analysis procedures in 2016 with oxygen calculated directly for oxidized specimens. b RDEV distribution observed for a vendor standardless analysis procedures in 2016 with oxygen calculated by stoichiometry for oxidized specimens
a
Count
b
Count
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142 measurements |
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15 kev |
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20 keV |
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-50% -44%-38% -32% -26% -20% -14% |
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RDEV (%) |
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102 measurements |
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O by stoichiometry |
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7 |
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15 keV |
3 |
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20 keV |
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1 |
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-50%-44% -38% -32% -26% -20% -14% |
-8% |
-2% |
4% |
10% 16% |
22% |
28% |
34% 40% |
46% |
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RDEV (%)